High Purity Silicon Sputtering Target Manufacturer for Semiconductor & Thin Film Deposition
Product Details
Product Description
Silicon Sputtering Target for SiO₂, Si₃N₄ and Semiconductor Thin Films
Ti Time supplies custom silicon sputtering targets, also known as Si sputtering targets, silicon targets or high-purity silicon targets, for PVD coating, magnetron sputtering, semiconductor-related thin films, optical coating, solar cells, display coating, glass coating, web coating and functional thin film applications.
Silicon sputtering targets are used to deposit silicon films and silicon-based compound films. In reactive sputtering with oxygen or nitrogen, silicon targets can be used to prepare SiO₂ and Si₃N₄ films for optical coatings, dielectric layers, barrier layers, protective films, display glass, solar cells, polymer barrier films and microelectronic applications.
- Custom silicon sputtering targets for PVD coating and magnetron sputtering
- Suitable for Si films, SiO₂ films, Si₃N₄ films and silicon-based functional thin films
- Single crystal silicon, polycrystalline silicon, intrinsic silicon, N-type and P-type silicon available
- Purity, crystal orientation, dopant, resistivity, shape, size and bonding can be customized
Key Features
Single crystal silicon, polycrystalline silicon, intrinsic silicon, N-type and P-type silicon targets can be supplied according to film design.
Purity options include 99.9%, 99.99%, 99.999%, 99.9999% or customized according to application requirements.
Silicon targets can be used in reactive sputtering with oxygen or nitrogen to prepare silicon oxide and silicon nitride films.
Planar, rotary, round, rectangular and bonded silicon target assemblies can be customized according to equipment requirements.
Product Specifications
| Product Name | Silicon Sputtering Target |
| Other Names | Si Sputtering Target, Silicon Target, High-Purity Silicon Target, Silicon PVD Target |
| Material | Silicon |
| Material Type | Single crystal silicon, polycrystalline silicon, intrinsic silicon, N-type silicon or P-type silicon |
| Purity | 99.9%, 99.99%, 99.999%, 99.9999% or customized |
| Conductivity Type | Intrinsic, N-type or P-type upon request |
| Dopant Option | Boron, phosphorus, arsenic or customized dopant upon request |
| Crystal Orientation | <100>, <111> or customized for single crystal silicon targets |
| Resistivity | Customized according to application requirement |
| Density | Approx. 2.33 g/cm³ for silicon |
| Melting Point | Approx. 1414°C for silicon |
| Shape | Planar, rotary, round, rectangular, plate or custom shape |
| Surface Finish | Ground, polished or customized |
| Backing Plate | Copper backing plate or custom target assembly available |
| Application | Si film, SiO₂ film, Si₃N₄ film, semiconductor-related films, optical coating, solar cell, display coating, glass coating and barrier film |
Suitable For
- Semiconductor-related films
- SiO₂ film deposition
- Si₃N₄ film deposition
- Optical coating
- Solar cells
- Display coating
- Glass coating
- Polymer barrier films
Silicon Target Material Options
Different silicon materials can be selected according to film application, process requirement, purity level, resistivity, dopant requirement and coating equipment. Single crystal silicon targets are commonly selected when crystal orientation and material uniformity are important, while polycrystalline silicon targets are suitable for many general coating and large-area applications.
| Material Type | Typical Feature | Common Use |
| Single Crystal Silicon Target | Controlled crystal orientation and high material uniformity | Semiconductor-related films, optical films and precision thin film deposition |
| Polycrystalline Silicon Target | Stable material structure and flexible size availability | General PVD coating, glass coating, solar cell and display applications |
| Intrinsic Silicon Target | Undoped silicon with high resistivity | Research films, optical coating and dielectric-related applications |
| N-type Silicon Target | Donor-doped silicon material | Electronic films and project-specific thin film design |
| P-type Silicon Target | Acceptor-doped silicon material | Semiconductor-related and custom electronic film applications |
| Custom Silicon Target | Specification adjusted according to project | Special sputtering process or customer-defined film design |
Final silicon type should be confirmed according to coating process, film design, resistivity requirement, purity requirement and customer technical specification.
Purity and Chemical Control
For silicon sputtering targets, purity, resistivity and impurity control are important for stable film quality, especially in semiconductor-related, optical, electronic and dielectric film applications.
| Item | Available Option / Control |
| Main Element | Silicon |
| Purity | 99.9%, 99.99%, 99.999%, 99.9999% or customized |
| Oxygen / Carbon | Controlled according to silicon grade and project requirement |
| Boron / Phosphorus | Controlled or intentionally doped according to specification |
| Metallic Impurities | Controlled according to purity grade and application requirement |
| Resistivity | Customized according to film design and customer requirement |
| Test Method | ICP, GDMS, resistivity testing or other suitable method upon request |
For semiconductor-related and optical applications, purity, resistivity, metallic impurity control, surface condition and particle control should be confirmed together before production.
Planar, rotary, round, rectangular and bonded silicon sputtering targets are available.
Available Silicon Sputtering Target Shapes
Different PVD coating systems require different silicon target structures. Ti Time can produce silicon targets according to laboratory coating machines, planar magnetron sputtering equipment, rotary coating systems, glass coating lines, display coating systems or web coating equipment.
Applications of Silicon Sputtering Targets
Silicon sputtering targets are widely used in thin film deposition and reactive sputtering applications. They can be used to deposit silicon films, silicon oxide films, silicon nitride films and silicon-based barrier or functional films.
Used for silicon films, dielectric layers and functional thin film stacks.
Used for optical layers, dielectric films, protective films and glass coating systems.
Used for barrier layers, protective coatings, display glass and web coating applications.
Used for photovoltaic thin film deposition and silicon-based functional layers.
Used in flat panel displays, touch screens and display glass coating processes.
Used in web coating for silicon-based barrier layers on flexible polymer films.
Silicon Targets for SiO₂ and Si₃N₄ Films
Silicon sputtering targets are often used in reactive sputtering to deposit silicon oxide and silicon nitride films. These films are widely used in optical, dielectric, protective, barrier and functional coating systems.
| Reactive Film | Sputtering Atmosphere | Typical Application |
| SiO₂ Film | Ar + O₂ | Optical coating, dielectric layer, protective layer and glass coating |
| Si₃N₄ Film | Ar + N₂ | Barrier layer, protective coating, display glass and web coating |
| Si-Based Film | Ar or mixed gas | Semiconductor-related films, functional films and research coating |
The final film property depends on silicon target quality, sputtering power, reactive gas ratio, substrate temperature, film thickness and post-treatment process.
Silicon Targets for Semiconductor and Microelectronics
High-purity silicon sputtering targets can be used in semiconductor-related and microelectronic thin film processes. Silicon films and silicon compound films may be used in dielectric stacks, passivation films, gate-related structures, barrier layers or functional film systems depending on process design.
| Requirement | Why It Matters |
| High Purity | Helps reduce impurity influence on thin film performance |
| Resistivity Control | Important for electronic and semiconductor-related film design |
| Crystal Orientation | Required for selected single crystal silicon target applications |
| Surface Condition | Clean and controlled surface helps reduce chips, cracks and particles |
| Bonding Quality | Important for brittle silicon targets and thermal management during sputtering |
Custom Silicon Sputtering Targets
Many coating systems require non-standard silicon target sizes, special crystal orientation, doped silicon or bonded target assemblies. Ti Time can produce silicon sputtering targets according to customer drawings, samples, old target photos or coating equipment information.
| Custom Item | Available Capability |
| Material Type | Single crystal silicon, polycrystalline silicon, intrinsic silicon, N-type or P-type silicon |
| Purity | 99.9%, 99.99%, 99.999%, 99.9999% or customized |
| Crystal Orientation | <100>, <111> or customized |
| Dopant | Boron, phosphorus, arsenic or customized |
| Resistivity | Customized according to application requirement |
| Shape and Size | Planar, rotary, round, rectangular and custom silicon targets |
| Surface | Ground, polished or customized surface finish |
| Backing Plate | Copper or other backing plates upon request |
Backing Plate Bonding
Silicon targets can be supplied as standalone targets or bonded with backing plates according to coating equipment requirements. Because silicon is a brittle target material, bonding quality and thermal management are important for stable sputtering operation.
| Bonding Option | Description |
| Copper Backing Plate | Common backing plate option for heat transfer and equipment compatibility |
| Indium Bonding | Suitable for many brittle sputtering target assemblies |
| Elastomer Bonding | Available according to equipment and project requirements |
| Custom Bonding | Produced according to drawings or old target samples |
| Target Assembly | Silicon target bonded as a complete sputtering assembly |
The suitable bonding method should be confirmed according to target size, sputtering power, cooling design and coating equipment requirements.
How to Choose a Silicon Sputtering Target
To select the correct silicon sputtering target, customers should confirm film application, silicon type, purity, crystal orientation, dopant, resistivity, target shape, surface finish, bonding requirement and coating equipment structure.
Si film, SiO₂ film, Si₃N₄ film, optical film, barrier film or semiconductor-related film.
Single crystal, polycrystalline, intrinsic, N-type or P-type silicon target.
Select 99.9%, 99.99%, 99.999%, 99.9999% or project-specific purity.
Resistivity should be confirmed for electronic and semiconductor-related applications.
Planar, rotary, round, rectangular, bonded or custom silicon target assembly.
Check whether backing plate bonding is required for thermal management and equipment mounting.
Quality Control & Export Packaging
Ti Time controls silicon target production from material selection to cutting, grinding, polishing, bonding, surface inspection and final packaging. Quality control can be arranged according to customer project requirements.
Inspection & Packaging Support
FAQ
A silicon sputtering target is a silicon source material used in PVD or magnetron sputtering systems to deposit silicon films, silicon oxide films, silicon nitride films and silicon-based functional thin films.
Silicon targets are commonly used for semiconductor-related films, microelectronics, SiO₂ films, Si₃N₄ films, solar cells, display coating, optical coating, glass coating, web coating and research thin film deposition.
Ti Time can supply silicon sputtering targets with purity options such as 99.9%, 99.99%, 99.999% and 99.9999%, depending on project requirements.
Yes. Silicon targets are commonly used in reactive sputtering with oxygen or nitrogen to deposit SiO₂ and Si₃N₄ films for optical, dielectric, barrier and protective coating applications.
Yes. Ti Time can support single crystal silicon targets, polycrystalline silicon targets, intrinsic silicon targets, N-type and P-type silicon targets according to customer specifications.
Yes. Silicon targets can be bonded with copper or other backing plates. Indium bonding and other bonding methods can be discussed according to target size and sputtering equipment.
Please provide silicon type, purity, crystal orientation if required, resistivity, target size, shape, quantity, drawing if available, bonding requirement and coating application. Old target photos or coating equipment information are also helpful.
Need Custom Silicon Sputtering Targets?
Send us your silicon type, purity, crystal orientation, resistivity, target size, drawing, coating equipment model, surface finish, bonding requirement and application. Our team will help confirm a suitable silicon sputtering target solution for your PVD coating or magnetron sputtering system.
Contact Ti Time for custom silicon sputtering targets for SiO₂ films, Si₃N₄ films, optical coating, semiconductor-related thin films, solar cells, display coating, glass coating and barrier film applications.
Product Highlights
Silicon Sputtering Target for SiO₂, Si₃N₄ and Semiconductor Thin Films Ti Time supplies custom silicon sputtering targets, also known as Si sputtering targets, silicon targets or high-purity silicon targets, for PVD coating, magnetron sputtering, semiconductor-related thin films, optical coating, ...
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